elektronische bauelemente BC807-16, -25, -40 -500 ma, -50 v pnp plastic encapsulate transistor 01-june-2002 rev. b page 1 of 2 collector base emitter dim min max a 2.800 3.040 b 1.200 1.400 c 0.890 1.110 d 0.370 0.500 g 1.780 2.040 h 0.013 0.100 j 0.085 0.177 k 0.450 0.600 l 0.890 1.020 s 2.100 2.500 v 0.450 0.600 all dimension in mm sot-23 k j c h l a b s g v 3 1 2 d top view 1 2 3 rohs compliant product a suffix of ?-c? specifies halogen-free & rohs compliant features z ideally suited for automatic insertion z epitaxial planar die construction z complementary to bc817 (npn type) marking BC807-16:5a; bc807-25:5b; bc807-40:5c absolute maximum ratings at ta = 25 c parameter symbol ratings unit collector to base voltage v cbo -50 v collector to emitter voltage v ceo -45 v emitter to base voltage v ebo -5 v collector current i c -500 ma collector power dissipation p c 300 mw junction, storage temperature t j , t stg +150, -55 ~ +150 characteristics at ta = 25 c symbol min. max. unit test conditions bv cbo -50 - v i c = -10 ua, i e = 0 bv ceo -45 - v i c = -10 ma, i b = 0 bv ebo -5 - v i e = -1 ua, i c = 0 i cbo - -0.1 ua v cb = -45v, i e = 0 i ceo - -0.2 ua v ce = -40v, i b = 0 i ebo - -0.1 ua v eb = -4v, i c = 0 v ce(sat) - -0.7 v i c = -500ma, i b = -50 ma v be(sat) - -1.2 v i c = -500ma, i b = -50 ma h fe(1) 807-16 807-25 807-40 100 160 250 250 400 600 v ce = -1 v, i c = -100 ma ft 100 - mhz v ce = -5 v, i c = -10 ma, f = 100mhz
elektronische bauelemente BC807-16, -25, -40 -500 ma, -50 v pnp plastic encapsulate transistor 01-june-2002 rev. b page 2 of 2 characteristic curves
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